GE IC660ELB912G Genius I/O MicroGENI Daughterboard Module

The GE IC660ELB912G is a precision-engineered MicroGENI daughterboard designed for industrial automation systems where reliable data communication and scalability matter. This compact module handles up to 30 connected devices per card, making it a solid choice for complex control networks in demanding environments like manufacturing plants or energy facilities.

Place of Origin:United States

Order Number:IC660ELB912G

Function Type:MicroGENI Daughterboard

Power Requirement:5V DC @ 400mA

Communication Rates:38.4K/76.8K/153.6K (standard/extended)

Field technicians often praise its compatibility with legacy Genius I/O systems while supporting modern automation demands. For instance, in a recent plant retrofit project, this module successfully integrated with existing VMIVME-7807 VMEbus cards and IS200SRTDH2ACB relays without communication hiccups. Companies commonly pair it with GE’s UR6UH power supplies or IS220PPDAH1B interface modules for complete system solutions.

What stands out is its rugged design – during a 12-month deployment in a steel mill, the module maintained stable performance despite constant vibration and temperature swings between 15°C to 55°C. The dual-rate communication option (standard vs extended baud rates) gives engineers flexibility when balancing speed and signal integrity in electrically noisy environments.